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Electrical Characteristics of the IGBT T
C
= 25 ? C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
? B VCES
? T J
I CES
I GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 uA
V GE = 0 V, I C = 1 mA
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/ ? C
uA
nA
On Characteristics
V GE(th)
G-E Threshold Voltage
I C = 10 mA, V CE = V GE
5.0
6.0
8.5
V
V CE(sat)
Collector to Emitter
Saturation Voltage
I C = 10 A ,
I C = 16 A ,
V GE = 15 V
V GE = 15 V
--
--
2.2
2.5
2.8
--
V
V
Dynamic Characteristics
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
--
--
--
660
115
25
--
--
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
--
--
15
30
--
--
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
T sc
Q g
Q ge
Q gc
L e
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn - On Switching Loss
Turn - Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V CC = 300 V, I C = 10 A,
R G = 20 ? , V GE = 15 V,
Inductive Load, T C = 25 ? C
V CC = 300 V, I C = 10 A,
R G = 20 ? , V GE = 15 V ,
Inductive Load, T C = 125 ? C
V CC = 300 V, V GE = 15 V
@ T C = 100 ? C
V CE = 300 V, I C = 10 A,
V GE = 15 V
Measured 5mm from PKG
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
36
158
141
215
356
16
33
42
242
161
452
613
--
30
5
8
7.5
50
200
--
--
500
--
--
60
350
--
--
860
--
45
10
16
--
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
us
nC
nC
nC
nH
Electrical Characteristics of DIODE T C
= 25 ? C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V FM
t rr
I rr
Q rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I F = 12 A
I F = 12 A,
di F /dt = 200 A/ ? s
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
T C = 25 ? C
T C = 100 ? C
--
--
--
--
--
--
--
--
1.4
1.3
42
60
3.5
5.6
80
220
1.7
--
60
--
6.0
--
180
--
V
ns
A
nC
?1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
2
www.fairchildsemi.com
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